Mechanical transfer electrode can effectively reduce the contact surface between the electrode and semiconductor material, however this method has not been applied to improve the performance of photoelectric devices. In this paper, MoS2 thin film photodetectors are fabricated by this novel method. Compared with the MoS2 thin film photodetectors prepared by the traditional hot evaporation method, the dark current of the transfer device decreased by nearly one order of magnitude, reaching 4.6 × 10-7 A, and the detectivity also increased significantly to 2.1 × 1010 Jones. All these results show that the mechanical transfer electrode can optimize the contact interface between the electrode and semiconductor material to achieve a higher performance photodetector.
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