We designed and experimentally studied a sampled Bragg grating semiconductor laser with π equivalent phase shift (EPS) and three equally separated electrodes. When the central electrode is injected different current from the other electrodes, a distributed phase shift (DPS) can be introduced into the studied laser. By changing the injection current ratio into three electrodes, the DPS can be controlled and then the lasing wavelength can be tuned while the laser keeps single longitudinal mode operation.
Parallel-coupled dual racetrack silicon microresonator structures are fabricated and characterized. With an integrated Mach–Zehnder interferometer, the full information of amplitude and phase of the structure is obtained experimentally. The spectral characteristics of the amplitude and phase are shown to be in reasonable agreement with simulation results, considering possible small structure variations in fabrication. The structure is potentially useful for developing modulators for advanced modulation formats.
An asymmetric sampled Bragg grating (SBG) semiconductor laser, which consists of two sections with same length but different sampling duty cycle, can be introduced an arbitrary equivalent-phase-shift (EPS) into its center. At the same time, to adjust the sampling duty cycles in the two sections as different magnitude, the studied laser can output more lasing power from its one facet than that from the other one. That is to say, this method can be used to design and fabricate the EPS SBG semiconductor laser with higher output efficiency.
A laser array, which is consisted of 56 π equivalent phase shift (EPS) sampled Bragg grating (SBG) semiconductor laser, is experimentally investigated. The experimental results show the influence of the sampling duty cycle fabrication error on the lasing wavelength of an SBG semiconductor laser can be ignored.
Based on a special sampling technique, we present a special structure for distributed feedback (DFB) lasers. As a
conventional equivalent π phase-shift sampling Bragg grating (SBG), this proposed structure also introduces an
equivalent π phase-shift into both its ±1st order channel. Combined with the conventional equivalent π phase-shift, the
sampling technique can be used to design and fabricate multiwavelength semiconductor or fiber lasers conveniently.
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