In this paper, we have study a 3.3kv silicon power diode BDIH with double injection holes on the back side, which structure with an inner N+ layer in the back P region of the CIBH. Based on Sentaurus-TCAD software, we simulate the reverse recovery process of BDIH diodes and conventional PIN diodes when the both diodes work on the condition that real current lower than standard current. The BDIH structure combines the advantages of RFC diodes and CIBH diodes, and the performance of it is better than that of conventional diodes, obviously improving the softness of reverse recovery at small current densities.
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