Structural properties of Si1-xGex layers grown onto crystalline or amorphous substrates by pulsed excimer laser annealing of Ge implanted silicon

Florence Repplinger; Eric Fogarassy; Adriana Grob; Jean-Jacques Grob; Bernard Prevot; Jean-Paul Stoquert; Salome de Unamuno

doi:10.1117/12.184774

7 September 1994 Structural properties of Si1-xGex layers grown onto crystalline or amorphous substrates by pulsed excimer laser annealing of Ge implanted silicon

Florence Repplinger, Eric Fogarassy, Adriana Grob, Jean-Jacques Grob, Bernard Prevot, Jean-Paul Stoquert, Salome de Unamuno

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Proceedings Volume 2207, Laser Materials Processing: Industrial and Microelectronics Applications; (1994) https://doi.org/10.1117/12.184774
Event: Europto High Power Lasers and Laser Applications V, 1994, Vienna, Austria

Abstract

In this paper, the preparation of SiGe films grown onto amorphous or single crystal substrates by pulsed excimer laser crystallization of heavily Ge implanted silicon is proposed as an alternative to classical MBE and CVD techniques. Processed films were characterized by ions (channeling-RBS) and optical (Raman) techniques.

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Florence Repplinger, Eric Fogarassy, Adriana Grob, Jean-Jacques Grob, Bernard Prevot, Jean-Paul Stoquert, and Salome de Unamuno "Structural properties of Si1-xGex layers grown onto crystalline or amorphous substrates by pulsed excimer laser annealing of Ge implanted silicon", Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); https://doi.org/10.1117/12.184774

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